Prevention of plasma induced damage arising from etching of...

Details Prevention of plasma induced damage arising from etching of... Prevention of plasma induced damage arising from etching of...

2006-04-14

2009-12-22

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S706000, C438S741000

Reexamination Certificate

active

07635650

ABSTRACT:
A method of fabricating a semiconductor device begins by forming a lower interconnection dielectric on a substrate and forming at least one active or passive device in the lower interconnection dielectric. An etch stop layer is formed on the lower interconnection dielectric and an interconnect stack layer is formed on the etch stop layer. At least one interconnect trench structure and at least one crack stop trench are etched in the interconnect stack layer while maintaining electrical isolation between the interconnect structure and the crack stop trench.

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