Method for producing semiconductor device having via hole

Details Method for producing semiconductor device having via hole Method for producing semiconductor device having via hole

1995-01-17

1996-09-17

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437250, H01L 21283

Patent

active

055568050

ABSTRACT:
A semiconductor device includes a first layer, a first interconnection layer formed on the first layer, at least one dummy pad formed on the first layer in a vicinity of the first interconnection layer, a second layer which is made of an insulator material and is formed on the first layer so as to cover the first interconnection layer and the dummy pad, and a second interconnection layer formed on the second layer and electrically coupled to the first interconnection layer via a via hole in the second layer. The dummy pad is provided in a vicinity of the via hole so that the second layer is approximately flat at least in the vicinity of the via hole, and the dummy pad is electrically isolated from the first and second interconnection layers.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
patent: 4523372 (1985-06-01), Balda et al.
patent: 4605470 (1986-08-01), Gwozdz et al.
patent: 4949162 (1990-08-01), Tamaki et al.
patent: 4994735 (1991-02-01), Leedy
patent: 5182235 (1993-01-01), Eguchi

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