Method for fabricating a charge coupled device

Details Method for fabricating a charge coupled device Method for fabricating a charge coupled device

1995-06-07

1996-09-17

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 50, 437 40, 437978, H01L 2170

Patent

active

055568033

ABSTRACT:
A charged coupled device structure (CCD) and a method for fabricating the CCD structure, which induces a maximum potential distribution difference by utilizing gate insulation films having different physical properties. The charged coupled device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a plurality of first electrodes spaced at fixed intervals over the first insulation layer, a second insulation layer formed only between the plurality of first electrodes and the first insulation layer, a third insulation layer formed over the entire exposed surface of the first electrodes and the first insulation layer, and a plurality of second electrodes formed only on the surface area corresponding to spaces between the plurality of first electrodes. This gate insulation layers having different physical properties induces a maximum potential distribution difference in a semiconductor substrate with a dielectric constant difference between the insulation layers.

REFERENCES:
patent: 3931674 (1976-01-01), Amelio
patent: 5334867 (1994-08-01), Shin et al.
patent: 5434097 (1995-07-01), Shin et al.

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