Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-01-07
2009-08-04
Rose, Kiesha L (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S012000, C257S079000, C257SE33027, C257SE33028, C257SE33034, C372S043010, C372S046013
Reexamination Certificate
active
07569862
ABSTRACT:
A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminum-containing cladding region or an aluminum-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5). The or each exposed portion of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5) is then oxidized to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).
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Bousquet Valerie
Heffernan Jonathan
Hooper Stewart
Johnson Katherine L.
Kauer Matthias
Renner , Otto, Boisselle & Sklar, LLP
Rose Kiesha L
Sharp Kabushiki Kaisha
Yang Minchul
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