Precursor for film formation and method for forming...

Details Precursor for film formation and method for forming... Precursor for film formation and method for forming...

2005-09-26

2009-06-09

Culbert, Roberts P (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

C427S126500

Reexamination Certificate

active

07544389

ABSTRACT:
Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNuwherein:2x+2≦y+zand 2≦x≦15and z>yand t+u≧1 (t+u preferably equal to 1)x, y, and z being positive integers equal to or greater than 1, t and u being integers greater than or equal to zero.

REFERENCES:
patent: 5378492 (1995-01-01), Mashiko et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
International Search Report for PCT/IB2005/002833.
Patent Abstracts of Japan, vol. 2000, No. 06, Sep. 22, 2000 & JP 2000 083929, Mar. 28, 2000.
Yuan, Z. et al. “Low-temperature chemical vapor deposition of ruthenium dioxide from ruthenium tetroxide: A simple approach to high-purity RuO2films”, Chemistry of Materials, American Chemical Society, Washington, US, vol. 5, No. 7, Jul. 1993, pp. 908-910.

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