Method for forming poly-silicon film

Details Method for forming poly-silicon film Method for forming poly-silicon film

2006-03-07

2009-11-03

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C438S487000, C438S166000

Reexamination Certificate

active

07611807

ABSTRACT:
In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam so as to increase the grain length. The method also achieves enhancing the throughput due to the use of a mask that is designed for the method.

REFERENCES:
patent: 6726768 (2004-04-01), Yoon
patent: 6908835 (2005-06-01), Sposili et al.
patent: 7011911 (2006-03-01), Kim et al.
patent: 2004/0053450 (2004-03-01), Sposili et al.
patent: 2005/0151146 (2005-07-01), Lee et al.
patent: 2005/0233224 (2005-10-01), Tseng et al.
patent: 2006/0024592 (2006-02-01), Kim
patent: 2007/0269993 (2007-11-01), Chu et al.

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