Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2009-07-28
2009-12-08
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S484000, C257SE29066, C257SE29197
Reexamination Certificate
active
07629626
ABSTRACT:
One of the aspects of the present invention is to provide a semiconductor device, which includes a semiconductor layer of a first conductive type having first and second surfaces. The semiconductor layer includes a base region of a second conductive type formed in the first surface and an emitter region of the first conductive type formed in the base region. Also, the semiconductor device includes a buffer layer of the first conductive type formed on the second surface of the semiconductor layer, and a collector layer of the second conductive type formed on the buffer layer. The buffer layer has a maximal concentration of the first conductive type impurity therein of approximately 5×1015cm−3or less, and the collector layer has a maximal concentration of the second conductive type impurity therein of approximately 1×1017cm−3or more. Further, the ratio of the maximal concentration of the collector layer to the maximal concentration of the buffer layer being greater than 100. The collector layer has a thickness of approximately 1 μm or less.
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Office Action dated Apr. 2, 2007.
United States Office Action issued in U.S. Appl. No. 12/510,604.
Kebede Brook
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
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