Program method of flash memory device

Details Program method of flash memory device Program method of flash memory device

2007-08-22

2009-10-13

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

07602648

ABSTRACT:
A method for operating a flash memory device includes applying a first program voltage Vp1to a plurality of word lines of memory cells. Threshold voltages of the memory cells are measured to obtain a first threshold voltage distribution for the memory cells. A second program voltage Vp2is applied to the word lines of the memory cells that had been programmed with the first program voltage Vp1. The threshold voltages of the memory cells that have been programmed with the second program voltage Vp2are measured to obtain a second threshold voltage distribution for the memory cells. A determination is made whether or not the memory cells that have been programmed with the second program voltage have been programmed properly. If the memory cells are determined to have been programmed properly, then the second program voltage is defined as an ending bias for a programming operation. If the memory cells are determined not to have been programmed properly, the memory cells are programmed using a third program voltage that is higher than the second program voltage.

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patent: 1020030031652 (2003-04-01), None

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