Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-03-17
2009-10-13
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S187000, C257S259000, C257S292000, C257S461000, C257S225000, C257S239000, C257SE27082, C257SE27083, C257SE27150, C257SE29227, C257SE29240, C359S015000
Reexamination Certificate
active
07601992
ABSTRACT:
A light detecting element1including an element formation layer22which contains a well region31.A surface electrode25is formed on the layer22through an insulating layer24.The region31contains an electron holding region32.The region32contains a hole holding region33.The layer24contains a control electrode26facing the region33through the layer24.Electrons and holes are generated at the layer22.There are two selected states. In one state, by controlling each electric potential applied to the electrodes25, 26,electrons are gathered at the region32,while holes are held at the region33.In another state, recombination is stimulated between the electrons and the holes. After the recombination, the remaining electrons are picked out as received light output.
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Chinese Examination Report.
P. Gulden, et al.; “Novel Optical Distance Sensor Based on MSM Technology;” Proceedings of IEEE Sensors 2002. Orlando, Florida, Jun. 12-14, 2002,IEEE International Conference on Sensors, New York, New York: IEEE, US, vol. 1 of 2, Conf. 1; Jun. 12, 2002; pp. 86-91.
Hashimoto Yusuke
Kurihara Fumikazu
Takada Yuji
Tsunesada Fumi
Armand Marc
Edwards Angell Palmer & & Dodge LLP
Fahmy Wael
Matsushita Electric & Works Ltd.
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