Magnetoresistive sensor element for sensing a magnetic field

Electricity: measuring and testing – Magnetic – Magnetometers

Reexamination Certificate

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C324S207120

Reexamination Certificate

active

07495434

ABSTRACT:
A magnetoresistive sensor element has a first magnetic layer structure, a second magnetic layer structure, and a barrier layer. The resistance R1of the first magnetic layer structure, the resistance R2of the second magnetic layer structure and resistance-area product RA define a characteristic length λ of the magnetoresistive sensor element by a functional relation. The contact spacing X0has an m-fold value of the characteristic length λ with 0.1<m<20, the first contact terminal a first edge spacing X1from the edge of the first magnetic layer structure with an n-fold value of the characteristic length λ with 0.5<n, the second contact terminal a second edge spacing X2from the edge of the first magnetic layer structure with a p-fold value of the characteristic length λ with 0.5<p, the resistance R1a q-fold value of the resistance R2with q>1.

REFERENCES:
patent: 5351028 (1994-09-01), Krahn
patent: 6812039 (2004-11-01), Kohlstedt et al.
patent: 2005/0151552 (2005-07-01), Abraham et al.
patent: 19938215 (2001-02-01), None
patent: 10342572 (2004-07-01), None
patent: 69727261 (2004-10-01), None

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