Device and method of manufacture for a low noise junction...

Details Device and method of manufacture for a low noise junction... Device and method of manufacture for a low noise junction...

2006-09-13

2009-08-04

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S262000, C257SE29312

Reexamination Certificate

active

07569874

ABSTRACT:
A microelectronic product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.

REFERENCES:
patent: 4373253 (1983-02-01), Khadder et al.
patent: 6005267 (1999-12-01), Griffin et al.
patent: 6624030 (2003-09-01), Chang et al.
patent: 10-256273 (1998-09-01), None
patent: 2006-196789 (2006-07-01), None
PCT International Search Report and Written Opinion, International Application No. PCT/US2007/078438; International Filing Date, Sep. 13, 2007; mailing date, Jan. 7, 2008, (7 pp.).

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