Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2004-12-30
2009-06-30
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C313S502000, C313S503000, C252S30140R, C252S30140F, C252S30160R
Reexamination Certificate
active
07554129
ABSTRACT:
A light emitting device can include a substrate, electrodes provided on the substrate, a light emitting diode configured to emit light, the light emitting diode being provided on one of the electrodes, phosphors configured to change a wavelength of the light, and an electrically conductive device configured to connect the light emitting diode with another of the plurality of electrodes. The phosphors can substantially cove at least a portion of the light emitting diode. The phosphor may include aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.
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Non-Final Office Action mailed May 23, 2007 for U.S. Appl. No. 11/024,722, filed Dec. 30, 200
Lee Chung Hoon
Roth Gundula
Tews Walter
HC Park & Associates PLC
Nguyen Joseph
Parker Kenneth A
Seoul Semiconductor Co. Ltd.
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