Noise isolation between circuit blocks in an integrated...

Active solid-state devices (e.g. – transistors – solid-state diode – Contacts or leads including fusible link means or noise...

Reexamination Certificate

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Details

C257S547000, C257S499000, C257S659000, C257SE21544

Reexamination Certificate

active

07608913

ABSTRACT:
An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region formed surrounding the p-well block region for providing noise isolation between the first circuit block and the second circuit block.

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International Search report for corresponding PCT Application No. PCT/US07/60655 mailed Nov. 21, 2008.

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