Thin film transistor substrate using horizontal electric...

Details Thin film transistor substrate using horizontal electric... Thin film transistor substrate using horizontal electric...

2004-11-02

2009-08-18

Nelms, David (Department: 2871)

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

C349S043000, C349S187000, C257S059000, C257S072000

Reexamination Certificate

active

07576822

ABSTRACT:
A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a common line formed parallel with each other from a first conductive layer on the substrate; a gate insulating film formed on the substrate, the gate line and the first common line; a data line formed from a second conductive layer on the gate insulating film, the data line crossing the gate line and the common line to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed connected to the common line from a third conductive layer, the common electrode being disposed within a first hole through the protective film and the gate insulating film; and a pixel electrode connected to the thin film transistor and formed from a third conductive layer, the pixel electrode being disposed within a second hole through the protective film and the gate insulating film at the pixel area, the pixel electrode and the common electrode being disposed to define a horizontal electric field.

REFERENCES:
patent: 5642212 (1997-06-01), Yamaue et al.
patent: 6839114 (2005-01-01), Moon et al.
patent: 6943853 (2005-09-01), Kim et al.
patent: 7136128 (2006-11-01), Hirakata et al.
patent: 2003/0133067 (2003-07-01), Park et al.
patent: 2003/0197182 (2003-10-01), Kim et al.
patent: A-2002-098995 (2002-04-01), None
patent: A-2003-0082647 (2003-10-01), None
Korean Office Action dated Jul. 25, 2005.

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