Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-01-31
2009-06-30
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S798000, C257SE21328, C257SE21475, C427S509000, C427S554000
Reexamination Certificate
active
07553772
ABSTRACT:
Process and apparatus provide reactive radicals generated from a remote plasma source which contact a portion of a substrate surface simultaneous with a contact of the same substrate surface with a light source which locally activates the portion of the substrate surface in contact with said radicals.
REFERENCES:
patent: 4687544 (1987-08-01), Bersin
patent: 4818326 (1989-04-01), Liu et al.
patent: 5014646 (1991-05-01), Ito et al.
patent: 6995051 (2006-02-01), Furukawa et al.
patent: 7094670 (2006-08-01), Collins et al.
patent: 2002/0182877 (2002-12-01), Nantel et al.
Gu Shiqun
Lin Hong
Lo Wai
Everhart Caridad M
LSI Corporation
Luedeka Neely & Graham P.C.
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