Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2007-10-25

2009-08-18

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185070, C365S185140

Reexamination Certificate

active

07577032

ABSTRACT:
The local row decoder includes a first MOS transistor of a first conductivity type having one end connected to the local word line, the other end supplied with a first voltage, and a gate connected to the global word line, and a second MOS transistor of a second conductivity type having one end connected to the local word line, the other end supplied with a second voltage, and a gate connected to the global word line. The global row decoder is capable of independently selecting either a first global word line or a second global word line. The first global word line is connected to the first MOS transistor and the second MOS transistor both connected to any one of the local word lines. The second global word line is connected to the first MOS transistor and the second MOS transistor both connected to another adjacent local word line.

REFERENCES:
patent: 6958940 (2005-10-01), Takase et al.
patent: 7177190 (2007-02-01), Lee
patent: 2000-49312 (2000-02-01), None

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