Multiple-transistor structure systems and methods in which...

Details Multiple-transistor structure systems and methods in which... Multiple-transistor structure systems and methods in which...

2006-08-30

2009-08-04

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257SE27054, C257SE21609, C257S273000, C257S197000, C438S336000

Reexamination Certificate

active

07569910

ABSTRACT:
A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first transistor also a make up portions of the second transistor. That is, both the first transistor and the second transistor are made of portions of the same structure.

REFERENCES:
patent: 5508553 (1996-04-01), Nakamura et al.
patent: 6462362 (2002-10-01), Miyoshi
patent: 2003/0045112 (2003-03-01), Vass et al.
patent: 2003/0219952 (2003-11-01), Fujimaki
patent: 62-262513 (1987-11-01), None
patent: 1-198068 (1989-08-01), None
patent: 7-094593 (1995-04-01), None
patent: 411214937 (1999-08-01), None
Ng, Complete Guide to Semiconductor Devices 2nd Edition, Bipolar Transistor, 34.5.1 Heterojunction Bipolar Transistor, 2000, pp. 279-280.
Official Office Action Letter dated Jul. 31, 2008 in counterpart Korean application (Application No. 2007-0085401), with English language translation.

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