Method of aligning nanotubes and wires with an etched feature

Details Method of aligning nanotubes and wires with an etched feature Method of aligning nanotubes and wires with an etched feature

2005-12-14

2009-08-18

Tran, Binh X (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S077000, C216S089000, C216S102000, C977S742000

Reexamination Certificate

active

07575693

ABSTRACT:
A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

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