Apparatus for thinning a semiconductor film on an insulating fil

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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437974, H01L 2100

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active

055565034

ABSTRACT:
In an SOI substrate having a base substrate, an insulating film and a semiconductor active layer, a potential difference is given between the base substrate and an etching solution or among the base substrate, the semiconductor active layer and the etching solution to form a uniform depletion layer on the active layer side from the interface between the insulating film and the active layer. The semiconductor active layer is uniformly thinned down by etching using a solution or by the combination of chemical or electro-chemical surface and etching with the resultant reaction product. In this case, the individual electrodes are provided with seal members to prevent the base substrate electrode and the active layer electrode from contacting the etching solution or the reaction solution due to the etching using the etching solution or the chemical reaction using the reaction solution. According to this invention, therefore, the active layer in, for example, a bonded SOI substrate can be thinned down uniformly at a low cost.

REFERENCES:
patent: 3755026 (1973-08-01), Reynolds
patent: 3776788 (1973-12-01), Henker
Mumola et al, "Plasma Thinned SOI Bonded Wafers", Mar. 1992, pp. 152-153, Hughes Danbury Optical Systems, Inc.
Mitani et al, "Wafer Bonding Technology for Silicon on Insulator Applications: A Review", 1992, pp. 669-676, Journal of Electronic Materials, vol. 21 No. 7.

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