Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-06-01
2009-08-11
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S769000
Reexamination Certificate
active
07573133
ABSTRACT:
One or more embodiments of the present invention relate to structures obtained by methods (a) for growing a film by an intermixing growth process, or (b) by depositing a film, which film includes chalcogenides of copper and/or silver (but excluding oxides), such as, for example, copper sulfide (CuSXand/or Cu2SX, where 0.7≦X≦1.3; and X=1.0 for stoichiometric compounds).
REFERENCES:
patent: 4330347 (1982-05-01), Hirayama et al.
patent: 4612410 (1986-09-01), Hewig et al.
patent: 4755394 (1988-07-01), Aoki et al.
patent: 5281304 (1994-01-01), Kadomura
patent: 5451542 (1995-09-01), Ashby
patent: 5863834 (1999-01-01), Kawaguchi et al.
patent: 5913147 (1999-06-01), Dubin et al.
patent: 5953628 (1999-09-01), Kawaguchi
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6181013 (2001-01-01), Liu et al.
patent: 6228759 (2001-05-01), Wang et al.
patent: 6429117 (2002-08-01), Sudijono et al.
patent: 6683002 (2004-01-01), Chooi et al.
patent: 6689689 (2004-02-01), Besser et al.
patent: 6713373 (2004-03-01), Omstead et al.
patent: 6798068 (2004-09-01), Oglesby
patent: 6836017 (2004-12-01), Ngo et al.
patent: 6841473 (2005-01-01), Wang et al.
patent: 6858527 (2005-02-01), Gracias
patent: 6873057 (2005-03-01), Chen et al.
patent: 6893895 (2005-05-01), Okoroanyanwu et al.
patent: 6939800 (2005-09-01), Lu et al.
patent: 2002/0027261 (2002-03-01), Besser et al.
patent: 2003/0116439 (2003-06-01), Seo et al.
patent: 2003/0135061 (2003-07-01), Norman et al.
patent: 2004/0051117 (2004-03-01), Chyan et al.
patent: 2004/0121583 (2004-06-01), Bao et al.
patent: 2004/0227247 (2004-11-01), Chooi et al.
patent: 2004/0238961 (2004-12-01), Cunningham
patent: 2004/0251549 (2004-12-01), Huang et al.
patent: 2005/0093162 (2005-05-01), Gracias
patent: 2000077412 (2000-03-01), None
Reference (B1-B6) Sophie Cassaignon et al., “Influence of the Composition on the Copper Diffusion in Copper Sulfides,” Jul. 1999, Journal of The Electrochemical Society, 146 (12), pp. 4666-4671.
Reference (B7-B15) Leslie H. Allen et al., “Copper electrodmigration in polyscrystalline copper sulfide,” Jul. 1984, Journal of Applied Physics, 56 (12), pp. 327-335.
Reference (B16-21) Leslie H. Allen et al., “Effect of ionic electromigration on CU(2-a) S/CdS solar cell” Feb. 1986 Journal of Applied Physics, 59 (4), pp. 1360-1365.
E. J. King, “Qualitative Analysis and Electrolytic Solutions”, Harcourt, Brace & World, Inc., 1959, pp. 140-143; 156-157; 178-185; 392-397.
Metals Handbook, vol. 8, 8thEdition (1973), American Society for Metals, pp. 297; 300; 358.
S. K. Ghandhi, “VLSI Fabrication Principles”, John Wiley & Sons, 1983, pp. 377-383.
H. Itow et al., “Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing”, Appl. Phys. Letters 63 (7), Aug. 16, 1993, pp. 934-936.
R.V.A. Rowe et al., “Low-resistance films of polyimides with impregnated copper sulfide”, J. Mater. Res. vol. 16, No. 11, Nov. 2001, pp. 3097-3106.
J. Johansson et al., “Growth of conductive copper sulfide thin films by atomic layer deposition”, J. Mater. Chem., 2002, vol. 12, pp. 1022-1026.
I. Ancutiene, “Modification of Polyethylene of Various Density by Layers of Copper Sulfide”, ISSN 1392-1320 Materials Science (MEDZIAGOTYRA), vol. 9, No. 4, 2003, pp. 351-354.
S. Arai et al., “Effect of S on Passivation of Ni Plating”, J. Electrochem. Soc., 151 (1), 2004, pp. C15-C18.
B. Lee, “Electroless CoWP Boosts Copper Reliability, Device Performance”, Semiconductor International, Jul. 2004, pp. 95-100.
J. Cardoso et al., “Conductive copper sulfide thin films on polyimide foils”, 2001 Semicond. Sci. Technol., vol. 16 (2001), pp. 123-127.
T. Sakamoto et al., “Nanometer-scale switches using copper sulfide”, Appl. Phys. Letters vol. 82 (18), May 5, 2003, pp. 3032-3034.
I. Grozdanov, “A simple and low-cost technique for electroless deposition of chalcogenide thin films”, Semicond. Sci. Technol. vol. 9 (1994), pp. 1234-1241.
A. Neisser et al., “Cu(In,Ga)S2Phase Formation from Metallic Cu-In-Ga Precursor Stacks in Rapid Thermal Processes”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H1.3.1-H1.3.6.
I. V. Luck et al., “Growth Monitoring of Cu-Poor Prepared CuInS2Thin Films”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H1.4.1-H1.4.6.
J. Titus et al., “Post-Deposition Sulfur Incorporation into CuInSe2Thin Films”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H1.5.1-H1.5.6.
T. Wada et al., “Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Applications”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H2.1.1-H2.1.12.
N. G. Dhere et al., “CIGS2 Thin Film Solar Cells On Stainless Steel Foil”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H3.4.1-H3.4.6.
I. Konovalov et al., “Electronic Properties of Cu-In-S Solar Cells on Cu-Tape Substrate”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H5.15.1-H5.15.6.
F. Donsanti et al, “Atomic Layer Deposition of Indium Sulfide Layers for Copper Indium Gallium Diselenide Solar Cells”, Mat. Res. Soc. Symp. Proc. vol. 668 (2001), pp. H8.20.1-H8.20.8.
D. Guimard et al., “Efficient Cu(In,Ga)Se2 Based Solar Cells Prepared By Electrodeposition”, Mat. Res. Soc. Symp. Proc. vol. 763 (2003), pp. B6.9.1-B6.9.6.
N. Naghavi et al., “Towards Better Understanding of High Efficiency Cd-free CIGS Solar Cells Using Atomic Layer deposition Indium Sulfide Buffer Layers”, Mat. Res. Soc. Symp. Proc. vol. 763 (2003), pp. B9.9.1-B9.9.6.
G. A. Armantrout et al., “Photovoltaic Properties of Reactively Sputtered CuxS Films and Reactively Sputtered CuxS-CdS Heterojunctions”, 13thIEEE Photovoltaic Specialists Conference, 1978, pp. 383-392.
J. J. Loferski et al., “Cathodoluminescence Characteristics of CuxS Films Produced by Different Methods”, Solar Energy Materials, vol. 1 (1979), pp. 157-169.
L. Hmurick, L. Allen, and R. Serway, “The effects of heat treatments on the transport properties of CuxS thin films”, J. Applied Physics, vol. 53(12), Dec. 1982, pp. 9063-9072.
L. H. Allen and E. Bunks, “Copper electromigration in polycrystalline copper sulfide”, J. Applied Physics, vol. 56(2), Jul. 1984, pp. 327-335.
L. H. Allen and E. Bunks, “Effect of ionic electromigration on Cu2-aS/CdS solar cell”, J. Applied Physics, vol. 59(4), Feb. 1986, pp. 1360-1365.
S. Cassaignon et al., “Influence of the Composition on the Copper Diffusion in Copper Sulfides”, J. of the Electrochemical Society, vol. 146(12), Dec. 1999, pp. 4666-4671.
W. Kai, G. W. Fan, P.C. Chen, and Y.T. Lin, “The Corrosion of Cu-Al Binary Alloys in H2/H2S/H2O Atmosheres at 400-900° C.”, Oxidation of Metals, vol. 61, Nos. 5/6, Jun. 2004, pp. 439-461.
LandOfFree
Interconnect structures and methods for their fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Interconnect structures and methods for their fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect structures and methods for their fabrication will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4107466