Stacked photoelectric converter

Details Stacked photoelectric converter Stacked photoelectric converter

2004-07-15

2009-06-23

Neckel, Alexa D (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

C136S261000, C136S258000

Reexamination Certificate

active

07550665

ABSTRACT:
In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.

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