Semiconductor surface emitting device

Details Semiconductor surface emitting device Semiconductor surface emitting device

2008-02-15

2009-11-03

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S050110, C372S050124

Reexamination Certificate

active

07613217

ABSTRACT:
This surface emitting semiconductor device1comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.

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Notification of Reason for Rejection issued on Dec. 16, 2008 for Japanese Application No. 2003-283055.
Japanese Office Action issued on Aug. 4, 2009 for Japanese Patent Application No. 2003-283055 with English translation.

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