Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-04-16
2009-06-02
Wells, Nikita (Department: 2881)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S313000, C430S396000, C430S311000
Reexamination Certificate
active
07541117
ABSTRACT:
Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.
REFERENCES:
patent: 6861178 (2005-03-01), Kikuchi
patent: 6969580 (2005-11-01), Minami
patent: 2002/0177051 (2002-11-01), Kikuchi
patent: 2003/0096177 (2003-05-01), Iwasaki
patent: 2000-124332 (2000-04-01), None
patent: 2000-258892 (2000-09-01), None
patent: 2001-305714 (2001-11-01), None
patent: 2002-351047 (2002-12-01), None
patent: 2005-201967 (2005-07-01), None
patent: 2005-227666 (2005-08-01), None
Japanese Office Action dated Jun. 24, 2008 from Application No. 2006-114827.
Nakamura Satomi
Nakayama Kohichi
Ogawa Kazuhisa
Smith Johnnie L
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Wells Nikita
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