Semiconductor light-emitting device and manufacturing method...

Details Semiconductor light-emitting device and manufacturing method... Semiconductor light-emitting device and manufacturing method...

2001-02-07

2009-02-24

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257SE33074, C372S045012

Reexamination Certificate

active

07495263

ABSTRACT:
On a GaAs substrate (1), are formed a DBR (Distributed Bragg Reflector) (3), and a light-emitting layer (5) made of a plurality of layers of AlyGazIn1-y-zP (0≦y≦1, 0≦z≦1) above the DBR (3). A semiconductor layer or a plurality of semiconductor layers (6)-(10) having a number of layers of 1 or more are formed on the light-emitting layer (5), and a grating pattern for scattering light is formed on a surface of the semiconductor layer (9) by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.

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U.S. Appl. No. 09/645,571 filed Aug. 25, 2000.

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