Method of manufacturing photoelectric conversion device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S045000, C438S054000, C257SE25004, C257SE25009, C257SE27123

Reexamination Certificate

active

07638352

ABSTRACT:
The present invention is a method of manufacturing a photoelectric conversion device having a multilayered interconnection (wiring) structure disposed on a semiconductor substrate, including steps of forming a hole in a region of the interlayer insulation film corresponding to an electrode of the transistor; burying an electroconductive substance in the hole; forming a hydrogen supplying film; conducting a thermal processing at a first temperature to supply a hydrogen from the hydrogen supplying film to the semiconductor substrate; forming the multilayered interconnection structure using Cu in a wiring material; and forming a protective film covering the multilayered interconnection structure, wherein the step of forming the multilayered interconnection structure, and the step of forming the protective film are conducted at a temperature not higher than the first temperature.

REFERENCES:
patent: 2003/0197228 (2003-10-01), Okuda et al.
patent: 2007/0045687 (2007-03-01), Kumura et al.
patent: 2008/0096291 (2008-04-01), Takai et al.
patent: 2003-264277 (2003-09-01), None
patent: 2003-264281 (2003-09-01), None
patent: 2004-179329 (2004-06-01), None
patent: 2005-72541 (2005-03-01), None
patent: 2006-210685 (2006-08-01), None
Notification of Reason for Refusal dated Oct. 30, 2007, regarding Application No. 2007-044010.

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