Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2004-09-10
2009-08-18
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S724000, C257SE23175
Reexamination Certificate
active
07576419
ABSTRACT:
A semiconductor device has an IC chip main body including a power transistor and a substrate of BGA type including an insulating substrate. A plurality of external electrodes are formed on a plurality of through holes formed in the insulating substrate so as to individually penetrate from one surface to the other surface and protrude to the other surface. Further, the external electrodes are arranged in a grid pattern. Power pads among IC pads of the IC chip main body are bonded to substrate pads connected to outermost peripheral external electrodes among the external electrodes of the substrate, such that the lengths of the wires become shorter.
REFERENCES:
patent: 6362525 (2002-03-01), Rahim
patent: 7019337 (2006-03-01), Eden et al.
patent: 7091564 (2006-08-01), Hasegawa
patent: 31 47165 (2001-01-01), None
Hamre Schumann Mueller & Larson P.C.
Monbleau Davienne
Rohm & Co., Ltd.
Trinh Hoa B
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4103436