Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Reexamination Certificate

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C257S724000, C257SE23175

Reexamination Certificate

active

07576419

ABSTRACT:
A semiconductor device has an IC chip main body including a power transistor and a substrate of BGA type including an insulating substrate. A plurality of external electrodes are formed on a plurality of through holes formed in the insulating substrate so as to individually penetrate from one surface to the other surface and protrude to the other surface. Further, the external electrodes are arranged in a grid pattern. Power pads among IC pads of the IC chip main body are bonded to substrate pads connected to outermost peripheral external electrodes among the external electrodes of the substrate, such that the lengths of the wires become shorter.

REFERENCES:
patent: 6362525 (2002-03-01), Rahim
patent: 7019337 (2006-03-01), Eden et al.
patent: 7091564 (2006-08-01), Hasegawa
patent: 31 47165 (2001-01-01), None

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