Input circuitry for transistor power amplifier and method...

Details Input circuitry for transistor power amplifier and method... Input circuitry for transistor power amplifier and method...

2007-09-07

2009-10-27

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

C330S305000

Reexamination Certificate

active

07609115

ABSTRACT:
A circuit having: an input matching network; a transistor coupled to an output of the input matching network; and wherein the input matching network has a first input impedance when such input matching network is fed with an input signal having a relatively low power level and wherein the input matching network has an input impedance different from the first input impedance when such input matching network is fed with an input signal having a relatively high power level.

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Notification of Transmittal of the International Search Report dated Nov. 6, 2008 PCT/US2008/076622.
The International Search Report dated Nov. 6, 2008.
Written Opinion of the International Searching Authority dated Nov. 6, 2008.
Shouxuan Xie, Vamsi Paidi, Sten Heikman, Likun Shen, Alessandro Chini, Umesh K> Mishra, Mark J.W. Rodwell, Stephen I. Long, High Linearity GaN Hemt Power Amplifier With Pre-Linearization Gate Diode, 2004, pp. 223-228, vol. 14, No. 3.
Hongtao Xu, Christopher Sanabria, Alessandro Chini, Stacia Keller, Umesh K. Mishra and Robert A. York, A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier, Jun. 2004, pp. 262-264, vol. 14, No. 6.
Haitao Zhang, Huai Gao, Guann-Pyng Li, A Novel Tunable Broadband Power Amplifier Module Operating From 0.8 GHz to 2.0 GHz, 2005, Electrical Engineering & Computer Science, Integrated Nanosystems Research Facility, University of California Irvine, CA 92697, US.

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