Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-05-03
2009-08-04
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S013000, C257S080000
Reexamination Certificate
active
07569864
ABSTRACT:
A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.
REFERENCES:
patent: 5629517 (1997-05-01), Jackson et al.
patent: 6617189 (2003-09-01), Chen et al.
patent: 7358101 (2008-04-01), Yang et al.
patent: 7391046 (2008-06-01), Tsutsumi et al.
Lan Shan-Ming
Ma Wei-Yang
Yang Tsun-Neng
Atomic Energy Council-Institute of Nuclear Energy Research
Bernstein Allison P
Phung Anh
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