Imaging device and imaging device drive method

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C348S308000, C250S214100

Reexamination Certificate

active

07619198

ABSTRACT:
The problem of the invention is to improve S/N and provide a high-sensitivity imaging device. The CMOS image sensor includes multiple pixels arranged in a two-dimensional array, where each pixel includes a photodiode PD that receives light to produce charge, a capacitance element FD, and a transfer transistor M1connected between photodiode PD and capacitance element FD, where the capacitance of capacitance element FD is less than the capacitance of photodiode PD. With the drive method, transfer transistor M1turns on during a predetermined period in a first charge transfer mode after the charge accumulation period is completed; first charge Q1accumulated on photodiode PD is transferred to capacitance element FD; the charge on capacitance element FD is then reset; transfer transistor M1turns on during a predetermined period in a second charge transfer mode after reset is completed; and second charge Q2accumulated on photodiode PD is transferred to transfer element FD.

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