Contact surrounded by passivation and polymide and method...

Details Contact surrounded by passivation and polymide and method... Contact surrounded by passivation and polymide and method...

2006-05-23

2009-11-10

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S737000, C257S779000, C257S784000, C257SE23021

Reexamination Certificate

active

07615866

ABSTRACT:
A semiconductor device has contact between the last interconnect layer and the bond pad that includes a barrier metal between the bond pad and the last interconnect layer. Both a passivation layer and a polyimide layer separate the last interconnect layer and the bond pad. The passivation layer is patterned to form a first opening to contact the last interconnect layer. The polyimide layer is also patterned to leave a second opening that is inside and thus smaller than the first opening through the passivation. The barrier layer is then deposited in contact with the last interconnect layer and bounded by the polyimide layer. The bond pad is then formed in contact with the barrier, and a wire bond is then made to the bond pad.

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