Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-04-01
2009-02-03
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S622000, C438S626000
Reexamination Certificate
active
07485962
ABSTRACT:
A substrate support (201) having a flat supporting surface (201a) is prepared, and a semiconductor substrate (1) is fixed to the substrate supporting surface (201) by attaching a wiring forming surface (1a) to the supporting surface (201a) by suction, for example, by vacuum suction. On this occasion, the wiring forming surface (1a) is forcibly flattened by being attached to the supporting surface (201a) by suction, and therefore the wiring forming surface (1a) becomes a reference plane for planarization of a back surface (1b). In this state, planarization processing is performed by mechanically grinding the back surface (1b) to grind away projecting portions (12) of the back surface (1b). Hence, variations in the thickness of the substrate (especially, semiconductor substrate) are made uniform, and high-speed planarization is realized easily and inexpensively without disadvantages such as dishing and without any limitation on a wiring design.
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Mizukoshi Masataka
Nakagawa Kanae
Teshirogi Kazuo
Fujitsu Limited
Potter Roy K
Westerman, Hattori, Daniels & Adrian , LLP.
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