MEMS semiconductor sensor device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

Reexamination Certificate

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Details

C257S288000, C257S352000, C257SE21580, C257SE21127, C257SE21154, C257SE21351

Reexamination Certificate

active

07633131

ABSTRACT:
A semiconductor sensor device is formed using MEMS technology by placing a thin layer of single-crystal silicon, which includes semiconductor devices, over a cavity, which has been formed in a semiconductor material. The thin layer of single-crystal silicon can be formed by forming the semiconductor devices in the top surface of a single-crystal silicon wafer, thinning the silicon wafer to a desired thickness, and then dicing the thinned wafer to form silicon layers of a desired size. The MEMS device can be used to implement a pressure sensor, microphone, temperature sensor, and a joystick.

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Karl Behringer, University of Washington, “EE 539 Tm/M(S)E 599 Tm, Lecture B2, Micro/Nano/MEMS”, Spring 2003, [online], [retrieved on Jun. 28, 2004]. Retrieved from the Internet: <URL:http://courses.washington.edu/mengr599/tm—taya
otes/b2.pdf>. pp. 1-10 (unnumbered).

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