Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-05-09
2009-10-27
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE29170
Reexamination Certificate
active
07608848
ABSTRACT:
A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. The first electrode has a circumferential extending shape, such as an annular shape, surrounding an inner wall of the contact structure. The second electrode is located within an interior of the circumferential extending shape and separated from the first electrode by an insulating material. A resistance memory bridge is in contact with an edge surface of the first and second electrodes. The first electrode in the contact structure is connected to a transistor and the second electrode in the contact structure is connected to a bit line. A bit line is connected to the second electrode by a self-aligning process.
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Ho Chia-Hua
Hsieh Kuang Yeu
Lai Erh-Kun
Budd Paul A
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Parker Kenneth A
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