Semiconductor device with high density low temperature deposited

Details Semiconductor device with high density low temperature deposited Semiconductor device with high density low temperature deposited

1981-05-19

1982-12-21

Clawson, Jr., Joseph E.

357 52, 357 59, 357 73, H01L 2934

Patent

active

043652646

ABSTRACT:
A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.

REFERENCES:
patent: 4001870 (1977-01-01), Saiki et al.
patent: 4040083 (1977-08-01), Saiki et al.
patent: 4091406 (1978-05-01), Lewis
patent: 4091407 (1978-05-01), Williams et al.
patent: 4097889 (1978-06-01), Kern et al.
W. Kern et al., "Advances in Deposition Processes for Passivation Films," J. of Vacuum Sci. and Tech., vol. 14, #5, Sep./Oct. 1977, pp. 1082-1099.

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