Semiconductor chip with passivation layer comprising metal...

Details Semiconductor chip with passivation layer comprising metal... Semiconductor chip with passivation layer comprising metal...

2005-10-28

2009-06-16

Nguyen, Kimberly D (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S503000, C257SE21590, C257SE23142

Reexamination Certificate

active

07547969

ABSTRACT:
The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.

REFERENCES:
patent: 4880708 (1989-11-01), Sharma et al.
patent: 5742094 (1998-04-01), Ting
patent: 6383916 (2002-05-01), Lin
patent: 6462426 (2002-10-01), Kelkar et al.
patent: 6617655 (2003-09-01), Estacio et al.
patent: 2003/0052409 (2003-03-01), Matsuo et al.

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