MRAM device with improved stack structure and offset field...

Details MRAM device with improved stack structure and offset field... MRAM device with improved stack structure and offset field...

2005-01-10

2009-11-24

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE27006, C365S158000

Reexamination Certificate

active

07622784

ABSTRACT:
A magnetic random access memory (MRAM) device includes a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation without the use of exchange coupling thereto. A storage magnetic region has an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of the reference magnetic region. A tunnel barrier is disposed between the reference magnetic region and the storage magnetic region, with the reference magnetic region, storage magnetic region and tunnel barrier defining a storage cell configured for a toggle mode write operation. The storage cell has an offset field applied thereto so as to generally maintain the resultant magnetic moment vector of the reference magnetic region in the desired orientation.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6625059 (2003-09-01), Sharma et al.
patent: 6633498 (2003-10-01), Engel et al.
patent: 6654278 (2003-11-01), Engel et al.
patent: 7033881 (2006-04-01), Gaidis et al.
patent: 2005/0047198 (2005-03-01), Engel et al.
patent: 2005/0099738 (2005-05-01), Xue et al.
patent: 2005/0253128 (2005-11-01), Worledge
patent: 2005/0280040 (2005-12-01), Kasko et al.
Conraux et al., Effects of swift heavy ion bombardment on magnetic tunnel junction functional properties, J. Appl. Phys. 93, 7301 (2003).
M. Durlam et al.; “A 0.18um 4Mb Toggling MRAM;” IEEE 2003.
W. Reohr et al.; “Memories of Tomorrow;” IEE Circuits & Devices Magazine, Sep. 2002, pp. 17-27.
D. C. Worledge; “Spin flop switching for magnetic random access memory;” Applied Physics Letters, vol. 84, No. 22, May 31, 2004; pp. 4559-4561.

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