Method for manufacturing isotope-doped carbon nanotubes

Details Method for manufacturing isotope-doped carbon nanotubes Method for manufacturing isotope-doped carbon nanotubes

2005-05-31

2009-12-01

Neckel, Alexa D (Department: 1795)

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

With means applying electromagnetic wave energy or...

C427S212000, C428S403000, C977S700000

Reexamination Certificate

active

07625530

ABSTRACT:
A method for manufacturing isotope-doped carbon nanotubes (10) includes the steps of: (a) providing a carbon rod (209) connected with an anode (214) of an electrical source, the carbon rod including at least two kinds of carbon isotope segments (202, 203) arranged therealong according to need; (b) providing a pure carbon rod (208) connected with a cathode (215) of the electrical source, the pure carbon rod positioned corresponding to the carbon rod and including carbon-12 isotopes; and (c) producing an arc discharge between the carbon rod and the pure carbon rod, wherein the carbon isotope segments of the carbon rod are consumed sequentially to form the isotope-doped carbon nanotubes on a surface of the pure carbon rod. Growth mechanisms of the isotope-doped carbon nanotubes manufactured by this method can be readily studied.

REFERENCES:
patent: 6517800 (2003-02-01), Cheng et al.
patent: 2004/0101685 (2004-05-01), Fan et al.
W. Z. Li, “Large-Scale Synthesis of Aligned Carbon Nanotubes,”Science,vol. 274, No. 5293, pp. 1701-1703 (1996).

Affiliated with

Also associated with

Rating

Method for manufacturing isotope-doped carbon nanotubes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing isotope-doped carbon nanotubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing isotope-doped carbon nanotubes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082702