Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2006-11-21
2009-10-06
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257SE23114, C257SE21665, C438S057000, C438S123000
Reexamination Certificate
active
07598596
ABSTRACT:
A shield structure for shielding an electromagnetic-field-susceptible region of a semiconductor component (e.g., a magnetoresistive random access memory, or “MRAM”) includes a stress-relief layer (e.g., electroplated Ni) formed over the semiconductor device in a shield region substantially corresponding to the electromagnetic-field-susceptible region, and a magnetic shield layer (e.g., an electroplated PERMALLOY or MUMETAL layer) mechanically coupled to the stress-relief layer within the shield region, wherein the magnetic shield layer has a stress condition that is substantially opposite of that of the stress-relief layer.
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Grynkewich Gregory W.
Molla Jaynal A.
Salter Eric J.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Kebede Brook
Ligai Maria
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