Schottky barrier tunnel single electron transistor and...

Details Schottky barrier tunnel single electron transistor and... Schottky barrier tunnel single electron transistor and...

2007-08-16

2009-10-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

C257SE21374

Reexamination Certificate

active

07605065

ABSTRACT:
Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

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Minoru Fujishima, et al; “Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device”, IEICE Trans. Electron..vol. E80-C, No. 7, Jul. 1997, pp. 881-885.

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