Masks of semiconductor devices and methods of forming...

Details Masks of semiconductor devices and methods of forming... Masks of semiconductor devices and methods of forming...

2004-12-27

2009-06-09

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07544446

ABSTRACT:
Disclosed are a mask of a semiconductor device and a method for forming a pattern thereof, which is capable of correcting a line width bias between a long line width and a short line width when a mask of a semiconductor transistor is formed. The mask may include a plurality of rectangular light shielding patterns formed on a mask disc on which gate line and contact holes are formed; and a connection pattern composed of a plurality of division patterns for selectively connecting the plurality of rectangular light shielding patterns one another. The plurality of rectangular light shielding patterns overlap with the contact hole mask and are formed on both sides of the connection pattern. The connection pattern is divided into 3 to 7 division patterns.

REFERENCES:
patent: 5496666 (1996-03-01), Chu et al.
patent: 7214453 (2007-05-01), Yamazoe et al.
patent: 2001/0049064 (2001-12-01), Lee et al.
patent: 2005/0089766 (2005-04-01), Woo et al.

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