Interconnection structure with TiON layers

Details Interconnection structure with TiON layers Interconnection structure with TiON layers

1994-02-08

1995-09-12

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, H01L 2128

Patent

active

054499542

ABSTRACT:
An interconnection structure for integrated semiconductor circuits has a Ti layer disposed on a semiconductor substrate, a TiON layer disposed on the Ti layer, and a TiN layer disposed on the TiON layer. A metallic interconnection layer containing Al is disposed on the TiN layer. The TiON layer is effective to prevent Al in the metallic interconnection layer and Si in the semiconductor substrate from being mutually diffused. The metallic interconnection layer can deposited, with a good coverage, in a connecting hole defined in an interlayer insulating layer on the substrate.

REFERENCES:
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5305519 (1994-04-01), Yamamoto et al.

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