Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2008-01-28
2009-08-11
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S288000, C330S310000
Reexamination Certificate
active
07573336
ABSTRACT:
A bias circuit22in a power amplifier1is provided with a VBE-controlled voltage source circuit20and a Nagata current mirror circuit21.The Nagata current mirror circuit21includes a transistor Tr5and a transistor Tr6.The transistor Tr5has its emitter grounded, its base connected to a control input terminal17via a resistor R3,and its collector connected to that base via a resistor R4.The transistor Tr6has its emitter grounded, its base connected to the collector of the transistor Tr5, and its collector connected to the base of the transistor Tr3.The arrangement is capable of compensating both the temperature characteristics of the gain of the power amplifier1and the control input voltage characteristics of the gain of the power amplifier1.In other words, the arrangement is capable of reducing the temperature dependence and control input voltage dependence of the gain of the power amplifier1.
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Furukawa Motoko
Ishimaru Yoshiteru
Harness & Dickey & Pierce P.L.C.
Nguyen Patricia
Sharp Kabushiki Kaisha
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