Method of forming a magnetic random access memory element

Details Method of forming a magnetic random access memory element Method of forming a magnetic random access memory element

2006-06-28

2009-12-22

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603120, C029S603130, C360S322000, C360S324000, C360S324120

Reexamination Certificate

active

07634851

ABSTRACT:
A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance of a magnetic tunnel junction memory element may be controlled by adjusting the surface area and/or thickness of the tunnel barrier layer without regard to the surface area of the ferromagnetic layers.

REFERENCES:
patent: 4256816 (1981-03-01), Dunkleberger
patent: 4420365 (1983-12-01), Lehrer
patent: 5201995 (1993-04-01), Reisman et al.
patent: 5496759 (1996-03-01), Yue et al.
patent: 5569617 (1996-10-01), Yeh et al.
patent: 5646805 (1997-07-01), Shen et al.
patent: 5702831 (1997-12-01), Chen et al.
patent: 5828531 (1998-10-01), Gill
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6108177 (2000-08-01), Gill
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6181537 (2001-01-01), Gill
patent: 6183859 (2001-02-01), Chen et al.
patent: 6211090 (2001-04-01), Duriam et al.
patent: 6211559 (2001-04-01), Zhu et al.
patent: 6261646 (2001-07-01), Chen et al.
patent: 6452764 (2002-09-01), Abraham et al.
patent: 6657246 (2003-12-01), Ono et al.
patent: 2002/0036331 (2002-03-01), Nickel et al.
patent: 2003/9206382 (2003-11-01), Carey et al.
patent: 9-282616 (1997-10-01), None
patent: 11-68192 (1999-03-01), None
Zhi G. Wang, et al.—“Feasibility of Ultra-Dense Spin-Tunneling Random Access Memory,” IEEE Transactions on Magnetics, vol. 33, No. 6, Nov. 1997.

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