Field effect transistor having gate and source regions in recess

Details Field effect transistor having gate and source regions in recess Field effect transistor having gate and source regions in recess

1994-03-11

1995-09-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257282, 257496, 257618, H01L 2948, H01L 2956, H01L 2964

Patent

active

054499321

ABSTRACT:
A field effect transistor having a gate electrode in a recess includes a gate electrode and a source electrode in the same recess and a drain electrode outside the recess. Therefore, the gate-to-drain breakdown voltage is increased without increasing the source resistance. A method for producing such an FET includes forming a drain electrode on a semiconductor layer; depositing a first insulating film covering the drain electrode; etching a region of the first insulating film and a portion of the semiconductor layer through an aperture in the first insulating film, thereby producing a recess; depositing a metal film for forming a source electrode and a second insulating film in the recess, thereby forming a source electrode covered by the second insulating film; depositing a third insulating film and anisotropically etching the third insulating film, leaving side walls at the source electrode and the recess; depositing and patterning a gate electrode metal film, thereby forming a gate electrode in an aperture of the third insulating film and in the recess. The gate electrode is formed stably at a prescribed position in the recess and the gate length can be shortened by controlling the thickness of the third insulating film.

REFERENCES:
patent: 4893155 (1990-01-01), Ohata
patent: 4984036 (1991-01-01), Sakamoto et al.
patent: 5185534 (1993-02-01), Sakamoto et al.
patent: 5321291 (1994-06-01), Redwine
patent: 5323036 (1994-06-01), Neilson et al.

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