Ion implantation simulation method

Details Ion implantation simulation method Ion implantation simulation method

1997-09-17

1999-06-15

Teska, Kevin J.

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395500, G06F 1130

Patent

active

059128240

ABSTRACT:
Disclosed is an ion implantation simulation method including calculating a particle scattering process of each of sample particles as a simulation target using a Monte Carlo method, determining that the particle has stopped when scattering calculation gives zero energy of the particle, continuously performing the scattering calculation when the energy is not 0. When the scattering calculation yields an energy of the particle that has decreased to .alpha. (0.ltoreq..alpha..ltoreq.1) times the energy value at the time of implantation, the particle Is divided into a predetermined number N (N is an integer) such that the weight of the particle after division becomes 1/N that before division. The scattering calculation and the particle division process is repeated until particles having non-zero energy values are divided the predetermined number of times M (M is an integer) counting from the first division, and consequently, the weight of the particle becomes 1/N.sup.M that of the initially implanted particle, performing the scattering calculation for particles which have been divided the predetermined number of times M until the energy value becomes 0, and determining the positions where the energy values of all the sample particles become 0 as stop positions in a substrate, thereby obtaining an impurity distribution.

REFERENCES:
patent: 3765956 (1973-10-01), Li
patent: 4136435 (1979-01-01), Li
patent: 4371406 (1983-02-01), Li
patent: 5420049 (1995-05-01), Russel et al.
patent: 5737250 (1998-04-01), Sawahata
patent: 5787269 (1998-07-01), Hyodo
Yang et al; "A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in SIngle-Crystal Silicon"; 1994; pp. 97-100; IEEE.
Dan; "Process Device Simulation Technology"; 1988; pp. 60-62; Sangyo Tosho Kabushiki Gaisha.

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