Static information storage and retrieval – Addressing – Sync/clocking
Reexamination Certificate
2008-02-09
2009-12-15
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Addressing
Sync/clocking
C365S149000, C365S194000
Reexamination Certificate
active
07633833
ABSTRACT:
The semiconductor memory device according to the invention is provided with a first delay circuit block that generates a timing signal of a circuit block to be operated in column cycle time determined by an external input command cycle and a second delay circuit block the whole delay of which is controlled to be a difference between access time determined by an external clock and the latency and column cycle time. These delay circuit blocks are controlled so that the delay of each delay circuit is a suitable value in accordance with column latency and an operating frequency, and each delay is controlled corresponding to dispersion in a process and operating voltage and a change of operating temperature.
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Akiyama Satoru
Nakamura Masayuki
Nakaya Hiroaki
Sekiguchi Tomonori
Takemura Riichiro
Elpida Memory Inc.
Hitachi , Ltd.
Ho Hoai V
Miles & Stockbridge P.C.
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