Ternary content addressable memory (TCAM) cells with low...

Details Ternary content addressable memory (TCAM) cells with low... Ternary content addressable memory (TCAM) cells with low...

2006-05-22

2009-08-04

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Associative memories

C365S154000, C365S168000

Reexamination Certificate

active

07570503

ABSTRACT:
A ternary content addressable memory (TCAM) cell circuit formed in a TCAM memory cell array having cells arranged in rows and columns can include a first storage circuit with first and second data path, a second storage circuit with a third and fourth data path, and a compare circuit. No more than four conductive lines in a column wise direction have a direct electrical connection to the TCAM cell. Such conductive lines can include a first bit line coupled to the first data path and the third data path and a second bit line coupled to the second data path and the fourth data path.

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