Method of altering the properties of a thin film and...

Details Method of altering the properties of a thin film and... Method of altering the properties of a thin film and...

2003-05-07

2009-06-30

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S089000, C117S090000, C117S091000, C117S092000, C977S811000, C977S825000, C977S832000

Reexamination Certificate

active

07553369

ABSTRACT:
The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of:forming at least one thin layer (1) on a nanostructured support with specific upper surface (2),and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

REFERENCES:
patent: 3607269 (1971-09-01), Young
patent: 4728591 (1988-03-01), Clark et al.
patent: 5338430 (1994-08-01), Parsonage et al.
patent: 5352651 (1994-10-01), Debe et al.
patent: 5374472 (1994-12-01), Krishnan
patent: 5387462 (1995-02-01), Debe
patent: 5459016 (1995-10-01), Debe et al.
patent: 6004494 (1999-12-01), Debe
patent: 6365059 (2002-04-01), Pechenik
patent: 6372364 (2002-04-01), Hunt et al.
patent: 6541392 (2003-04-01), Avniel et al.
patent: 6692568 (2004-02-01), Cuomo et al.
patent: 6784085 (2004-08-01), Cuomo et al.
patent: 6787198 (2004-09-01), Mukherjee et al.
patent: 6803244 (2004-10-01), Diener et al.
patent: 6834149 (2004-12-01), Dietz et al.
patent: 6853075 (2005-02-01), Auner et al.
patent: 6858521 (2005-02-01), Jin
patent: 6913697 (2005-07-01), Lopez et al.
patent: 6946410 (2005-09-01), French et al.
patent: 6992321 (2006-01-01), Tungare et al.
patent: 6998358 (2006-02-01), French et al.
patent: 7056751 (2006-06-01), Faris
patent: 7115910 (2006-10-01), Dutta
patent: 7132678 (2006-11-01), Kagan et al.
patent: 2004/0033942 (2004-02-01), Jackson et al.
patent: 2004/0195202 (2004-10-01), Pechenik
patent: 2005/0181587 (2005-08-01), Duan et al.
patent: 2006/0145326 (2006-07-01), Tran
patent: 2006/0211183 (2006-09-01), Duan et al.
patent: 2006/0260674 (2006-11-01), Tran
patent: 2007/0012980 (2007-01-01), Duan et al.
patent: 10 258273 (2000-03-01), None
patent: 2 689912 (1993-10-01), None
patent: 2000091627 (2000-03-01), None
Romanov S I et al: “GESI Films With Reduced Dislocation Density Grown by Molecular-Beamepitaxy on Compliant Substrates Based on Porous Silicon” Applied Physics Letters, American Institute of Physics, New York, US, vol. 75, No. 26, Dec. 27, 1999, pp. 4118-4120, XP000902592.
English Machine Translation and Abstract for JP JP02000091627A.
Romanov et al, “GeSi Films With Reduced Dislocation Density Grown by Molecular-Beam Epitaxy on compliant Substrates Based on Porous Silicon” Applied Physics Letter, etc., vol. 75, No. 26, Dec. 27, 1999, pp. 4118-4120.
Sanchez et al, “Structural and Morphological Characteristics of InGaAs/GaAs Quantum Well Structures on Tilted (111) BGaAs Grown by MBE”, Journal of Crystal Growth etc., vol. 192, No. 3-4, Sep. 1, 1998, pp. 363-371.

Affiliated with

Also associated with

Rating

Method of altering the properties of a thin film and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of altering the properties of a thin film and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of altering the properties of a thin film and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4062097