Semiconductor element and method for producing the same

Details Semiconductor element and method for producing the same Semiconductor element and method for producing the same

1984-12-28

1987-08-11

Larkins, William D.

357 36, 357 51, 357 20, H01L 2972, H01L 2702, H01L 2906

Patent

active

046865578

ABSTRACT:
Semiconductor element, including at least one bi-polar power transistor having parallel-connected transistor regions, active and contacted partial base zone regions, an emitter zone-base zone pn-junction, and base barrier resistances disposed between the active base regions at the emitter-base pn-junction and the contacted base regions, the greater part of the base current being conducted through the base barrier resistances and the voltage drop over the emitter region being small compared to the voltage between the active base region and the contacted base region.

REFERENCES:
patent: 3665266 (1972-05-01), Drozdowicz et al.
patent: 3858234 (1974-12-01), Olson
patent: 4486770 (1984-12-01), Woodward
patent: 4511912 (1985-04-01), Mahrla
Warner, Raymond Jr., Integrated Circuits, N.Y., McGraw-Hill, .COPYRGT.1965, p. 29.
Murari, Bruno, "Power Integrated Circuits: Problems, Tradeoffs, and Solutions", IEEE Journal of Solid State Circuits, vol. SC-13, No. 3, pp. 307-319, Jun. 1978.

Affiliated with

Also associated with

Rating

Semiconductor element and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor element and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-406204