Self-aligned contact formation utilizing sacrificial...

Details Self-aligned contact formation utilizing sacrificial... Self-aligned contact formation utilizing sacrificial...

2007-12-18

2009-12-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S400000, C438S448000, C438S435000, C438S523000, C438S533000, C438S629000, C438S669000, C438S672000, C438S675000, C257SE21545, C257SE21546, C257SE21547, C257SE21585, C257SE21657

Reexamination Certificate

active

07632736

ABSTRACT:
In general, in one aspect, a method includes forming a spacer layer over a substrate having patterned stacks formed therein and trenches between the patterned stacks. A sacrificial polysilicon layer is deposited over the substrate to fill the trenches. A patterning layer is deposited over the substrate and patterned to define contact regions over at least a portion of the trenches. The sacrificial polysilicon layer is etched using the patterned patterning layer to form open regions.

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